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Smart High-Side Power Switch BTS716GB
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Data Sheet
1
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
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Data Sheet
2
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Pin Definitions and Functions
Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance IN1 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal IN2 IN3 IN4 OUT1 Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the OUT2 max. short circuit current OUT3 OUT4 ST1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 ST3/4 open drain, low on failure GND1/2 Ground of chip 1 (channel 1,2) GND3/4 Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb
1 2 3 4 5 6 7 8 9 10
*
20 19 18 17 16 15 14 13 12 11
Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb
Data Sheet
3
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Load current (Short-circuit current, see page 6) Load dump protection2) VLoadDump = VA + Vs, VA = 13.5 V RI3) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 , Operating temperature range Storage temperature range Power dissipation (DC)5) Ta = 25C: (all channels active) Ta = 85C: Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150C5), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 one channel: IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
Symbol
Values 43 36
Unit V V A V C W
Vbb Vbb IL VLoad dump4) Tj Tstg Ptot
IL(lim)1 60
-40 ...+150 -55 ...+150 3.6 1.9
ZL
21 25 30 1.0 4.0 8.0 -10 ... +16 0.3 5.0 5.0
mH
VESD
kV
Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin6) Current through status pin (DC)
VIN IIN IIN IST
V mA
1) 2) 3) 4) 5) 6)
Operation in current limitation is considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 only for testing
4 V1.0, 2007-05-13
Data Sheet
Smart High-Side Power Switch BTS716GB
Parameter and Conditions Thermal resistance junction - soldering point7)8) junction - ambient6) @ 6 cm2 cooling area
Symbol
Values min typ max ------44 35 17 ----
Unit
each channel: Rthjs Rthja one channel active: all channels active:
K/W
Electrical Characteristics
Parameter and Conditions, each of the four channels
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A each channel, Tj = 25C: RON Tj = 150C: two parallel channels, Tj = 25C: four parallel channels, Tj = 25C:
see diagram, page 11
----2.3 3.3 4.7 --
110 210 55 28 2.6 3.7 5.3 --
140 280 70 35 ---2
m
Nominal load current
one channel active: IL(NOM) two parallel channels active: four parallel channels active:
A
Device on PCB6), Ta = 85C, Tj 150C
Output current while GND disconnected or pulled up;
Vbb = 32 V, VIN = 0, see diagram page 9; (not tested specified by design)
IL(GNDhigh)
mA s
Turn-on time9) Turn-off time RL = 12 Slew rate on 8) Slew rate off 8)
IN IN
to 90% VOUT: ton to 10% VOUT: toff
--0.2 0.2
100 100 ---
250 270 1.0 1.1
10 to 30% VOUT, RL = 12 : dV/dton 70 to 40% VOUT, RL = 12 : -dV/dtoff
V/s V/s
7) 8) 9)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 Soldering point: upper side of solder edge of device pin 15. See page 14 See timing diagram on page 12.
5 V1.0, 2007-05-13
Data Sheet
Smart High-Side Power Switch BTS716GB
Parameter and Conditions, each of the four channels
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max 5.5 -41 ------47 9 --1 40 3.2 52 16 24 16 5
Unit
Operating Parameters Operating voltage Undervoltage switch off10) Tj =-40...125C: not tested, specified by design: Overvoltage protection11) I bb = 40 mA Standby current12) Tj =-40C...25C: VIN = 0; see diagram page 11 Tj =150C: not tested, specified by design: Tj =125C: Off-State output current (included in Ibb(off)) VIN = 0; each channel Operating current 13), VIN = 5V, IGND = IGND1 + IGND2, one channel on: all channels on:
Vbb(on) Vbb(u so) Vbb(AZ) Ibb(off)
V V V A A
IL(off)
IGND
---
0.5 1.9
0.9 3.3
mA
Protection Functions14) Current limit, Vout = 0V, (see timing diagrams, page 12) Tj =-40C: IL(lim) Tj =25C: Tj =+150C: Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) two,three or four parallel channels
(see timing diagrams, page 12)
--5 ---41 150 --
-9 -6.5 6.5 2 47 -10
14 -----52 ---
A
A ms V C K
Initial short circuit shutdown time
Vout = 0V
Tj,start =25C: toff(SC) VON(CL) Tjt Tjt
(see timing diagrams on page 12)
Output clamp (inductive load switch off)15)
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature Thermal hysteresis
10) 11)
12) 13) 14)
15)
is the voltage, where the device doesnt change its switching condition for 65ms after the supply voltage falling below the lower limit of Vbb(on) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 9. Measured with load; for the whole device; all channels off Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL)
Data Sheet
6
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Parameter and Conditions, each of the four channels
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Reverse Battery Reverse battery voltage 16) Drain-source diode voltage (Vout > Vbb) IL = - 2.0 A, Tj = +150C Diagnostic Characteristics Open load detection voltage
-Vbb -VON
---
-600
32 --
V mV
V OUT(OL)1
1.7
2.8
4.0
V
Input and Status Feedback17) Input resistance
(see circuit page 9)
RI VIN(T+) VIN(T-) VIN(T) td(STon) td(STon) td(SToff) td(SToff) IIN(off) IIN(on) VST(high) VST(low)
2.5 -1.0 --30 --5 10 5.4 --
4.0 --0.2 10 ----35 ---
6.0 2.5 --20 -500 20 20 60 -0.6
k V V V s s s s A A V
Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Status change after positive input slope18) with open load Status change after positive input slope17) with overload Status change after negative input slope with open load Status change after negative input slope17) with overtemperature Off state input current VIN = 0.4 V: On state input current VIN = 5 V: Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA:
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 17) If ground resistors R GND are used, add the voltage drop across these resistors. 18) not tested, specified by design Data Sheet 7 V1.0, 2007-05-13
16)
Smart High-Side Power Switch BTS716GB
Truth Table
Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2)
Normal operation
Chip 1 Chip 2
IN1 IN3 L L H H L H X X L X H L H X X
IN2 IN4 L H L H X X L H L H X X X L H
OUT1 OUT3 L L H H Z H X X L L L L L X X
OUT2 OUT4 L H L H X X Z H L L L X X L L
ST1/2 ST3/4 H H H H L19) H L15) H H L L H L H L
Open load
Channel 1 (3) Channel 2 (4)
Overtemperature
both channel
Channel 1 (3) Channel 2 (4)
L = "Low" Level H = "High" Level
X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
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Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1, RGND2 = 150 or a single resistor RGND = 75 for reverse battery protection up to the max. operating voltage.
19)
L, if potential at the Output exceeds the OpenLoad detection voltage
Data Sheet
8
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Input circuit (ESD protection), IN1 to IN4
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Overvolt. and reverse batt. protection
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The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
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Status output, ST1/2 or ST3/4
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VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active
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Open-load detection, OUT1...4
OFF-state diagnostic condition: Open Load, if VOUT > 3 V typ.; IN low
9
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
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Any kind of load. In case of IN = high is VOUT VIN - VIN(T+). Due to VGND > 0, no VST = low signal available.
Data Sheet
9
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
GND disconnect with GND pull up
Inductive load switch-off energy dissipation
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Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
Vbb disconnect with energized inductive load
EL = 1/2*L*I L
While demagnetizing load inductance, the energy dissipated in PROFET is
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EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
with an approximate solution for RL > 0 : IL* L (V + |VOUT(CL)|) 2*RL bb IL*RL
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OUT(CL)|
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9
Maximum allowable load inductance for a single switch off (one channel)5)
EE
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For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.
ZL [mH]

IL [A]
Data Sheet 10 V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Typ. on-state resistance
521 I 9EE7M ; IL = 2 A, IN = high RON [mOhm]
7M
&
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Vbb [V]
Typ. standby current
,EERII

I 7M ; Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [A]
Tj [C]
Data Sheet
11
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4
Figure 1a: Vbb turn on: ,1 Figure 2b: Switching a lamp:
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Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:
Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling
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Data Sheet 12
Heating up of the chip may require several milliseconds, depending on external conditions
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2)
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Figure 5a: Open load: detection in OFF-state, turn on/off to open load Open load of channel 1; other channels normal operation
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ST1 and ST2 have to be configured as a 'Wired OR' function ST1/2 with a single pull-up resistor.
Figure 4a: Overtemperature: Reset if Tj ,1
Figure 6a: Status change after, turn on/off to overtemperature Overtemperature of channel 1; other channels normal operation
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Data Sheet
13
V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Package Outlines
2.65 max
0.35 x 45
+0.09
2.45 -0.2
0.2 -0.1
7.6 -0.2 1)
1.27 0.35
+0.15 2)
0.4 +0.8 0.2 24x 20 11 0.1 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Figure 1
PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Data Sheet 14
0.23
8 ma x
Dimensions in mm V1.0, 2007-05-13
Smart High-Side Power Switch BTS716GB
Revision History
Version V1.0 Date 2007-05-13 Changes Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green.
Data Sheet
15
V1.0, 2007-05-13
Edition 2007-05-13 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 9/1/08. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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